Analytical approach of hot electron transport in small size MOSFET's

Jean-Pierre Leburton, H. Gesch, G. Dorda

Research output: Contribution to journalArticle

Abstract

A one-dimensional analytical description of the current transport in MOS transistors with a channel length of the order of 1 μm is presented. The theory is based on the empirical Scharfetter and Gummel formula expressing the velocity-field relation of the charge carriers in the Si bulk. A new formula is derived taking into account the surface condition. The analysis of the hot electron behavior in Si-inversion layers suggests the formulation of a new criterion for the failure of the usual "gradual channel approximation", replacing the classical "pinch-off" concept by a field relation factor f=Ey/Ex. I-U characteristics for different transistor channel lengths are calculated and compared with experimental data and with two-dimensional analyses. The agreement between both these results and our formulation is quite good and proves the accuracy of the one-dimensional approach.

Original languageEnglish (US)
Pages (from-to)763-771
Number of pages9
JournalSolid State Electronics
Volume24
Issue number8
DOIs
StatePublished - Aug 1981
Externally publishedYes

Fingerprint

Hot electrons
hot electrons
field effect transistors
Inversion layers
MOSFET devices
transistors
Charge carriers
formulations
Transistors
charge carriers
velocity distribution
inversions
approximation
Electron Transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Analytical approach of hot electron transport in small size MOSFET's. / Leburton, Jean-Pierre; Gesch, H.; Dorda, G.

In: Solid State Electronics, Vol. 24, No. 8, 08.1981, p. 763-771.

Research output: Contribution to journalArticle

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