Analytical approach of hot electron transport in small size MOSFET's

J. P. Leburton, H. Gesch, G. Dorda

Research output: Contribution to journalArticle

Abstract

A one-dimensional analytical description of the current transport in MOS transistors with a channel length of the order of 1 μm is presented. The theory is based on the empirical Scharfetter and Gummel formula expressing the velocity-field relation of the charge carriers in the Si bulk. A new formula is derived taking into account the surface condition. The analysis of the hot electron behavior in Si-inversion layers suggests the formulation of a new criterion for the failure of the usual "gradual channel approximation", replacing the classical "pinch-off" concept by a field relation factor f=Ey/Ex. I-U characteristics for different transistor channel lengths are calculated and compared with experimental data and with two-dimensional analyses. The agreement between both these results and our formulation is quite good and proves the accuracy of the one-dimensional approach.

Original languageEnglish (US)
Pages (from-to)763-771
Number of pages9
JournalSolid State Electronics
Volume24
Issue number8
DOIs
StatePublished - Aug 1981
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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