An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jan 18 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)