Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Leonard F. Register, Elyse Rosenbaum, Kevin Yang

Research output: Contribution to journalArticle

Abstract

An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.

Original languageEnglish (US)
Pages (from-to)457-459
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number3
DOIs
StatePublished - Jan 18 1999

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semiconductor devices
metal oxide semiconductors
Wentzel-Kramer-Brillouin method
silicon
electron impact
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices. / Register, Leonard F.; Rosenbaum, Elyse; Yang, Kevin.

In: Applied Physics Letters, Vol. 74, No. 3, 18.01.1999, p. 457-459.

Research output: Contribution to journalArticle

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