Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Leonard F. Register; Elyse Rosenbaum; Kevin Yang

doi:10.1063/1.123060

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Leonard F. Register, Elyse Rosenbaum, Kevin Yang

Research output: Contribution to journal › Article › peer-review

Abstract

An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.

Original language	English (US)
Pages (from-to)	457-459
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	3
DOIs	https://doi.org/10.1063/1.123060
State	Published - Jan 18 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123060

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abstract = "An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.",

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AB - An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.

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Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

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