Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations

Keyphrases

• Molecular Dynamics Simulation 100%
• P-type Doping 100%
• Plasma-assisted Molecular Beam Epitaxy 100%
• Modulation Doping 100%
• Mg Incorporation 100%
• Growth Method 66%
• Doped GaN 66%
• High Performance 33%
• Desorption 33%
• Atomistic Simulation 33%
• Computationally Efficient 33%
• Growth Process 33%
• Transition Rates 33%
• Doping Concentration 33%
• P-dopant 33%
• GaN Crystal 33%
• Choice Method 33%
• Experiment-based 33%
• C-V Measurement 33%
• Hall Measurement 33%
• GaN Growth 33%
• XRD Measurements 33%
• Power Device 33%
• Growth Experiment 33%
• GaN Devices 33%
• Power Handling 33%
• SIMS Measurements 33%
• Tersoff Potential 33%

Material Science

• Doping (Additives) 100%
• Secondary Ion Mass Spectrometry 50%
• X-Ray Diffraction 50%
• Film 50%
• Desorption 50%
• Power Device 50%

Chemical Engineering

• Secondary Ion Mass Spectrometry 100%
• Desorption 100%
• Film 100%