Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations

Fawad Hassan Ismail, Matthew Landi, Frank Putnam Kelly, Kyekyoon Kim

Research output: Contribution to conferencePaper

Abstract

This work concerns the investigation of high Mg incorporation in GaN. Mg is a widely used p-dopant for GaN, which could benefit from high dopant concentration, as well as high activation, through novel growth methods. This has the potential to create high performance GaN devices, owing to the use of quality p-doped GaN. We carry out this investigation on two fronts. First, we explore the feasibility of PAMBE based modulation doping as the growth method of choice for high incorporation. We conduct growth experiments based on variations of Ga, N, and Mg fluxes, and assess the quality of the films and resulting p-doped samples using SIMS, XRD, CV, and Hall measurements. Second, we carry out atomistic simulations, using MD and KMC, to develop insights into the growth of GaN crystals, guiding the growth process as a result. We incorporate 3-body Tersoff potentials, developed specifically for GaN, to simulate GaN growth through MD. We extract migration, absorption, and desorption statistics, and utilize these transition rates in a computationally efficient method, KMC. Use of high quality p-doped GaN in power devices will help further advance this technology in terms of efficiency, compactness, and power handling.

Original languageEnglish (US)
StatePublished - Jan 1 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: Apr 29 2019May 2 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period4/29/195/2/19

Fingerprint

Molecular dynamics
Doping (additives)
Modulation
Computer simulation
Secondary ion mass spectrometry
Desorption
Chemical activation
Statistics
Fluxes
Crystals
Experiments

Keywords

  • Incorporation
  • Kinetic Monte Carlo
  • Magnesium
  • P-GaN
  • PAMBE
  • Simulation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ismail, F. H., Landi, M., Kelly, F. P., & Kim, K. (2019). Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations. / Ismail, Fawad Hassan; Landi, Matthew; Kelly, Frank Putnam; Kim, Kyekyoon.

2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conferencePaper

Ismail, FH, Landi, M, Kelly, FP & Kim, K 2019, 'Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations' Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States, 4/29/19 - 5/2/19, .
Ismail FH, Landi M, Kelly FP, Kim K. Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations. 2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.
Ismail, Fawad Hassan ; Landi, Matthew ; Kelly, Frank Putnam ; Kim, Kyekyoon. / Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.
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