Analysis of free Si in SiC and Si3N4 based ceramics with emphasis on accuracy and industrial application

M. T. Marefati, F. Golestanifard, A. Moatti, M. Eslami

Research output: Contribution to specialist publicationArticle

Abstract

Non-oxide engineering ceramics such as silicon carbide and silicon nitride are receiving ever attentions due to their thermal and chemical resistance. However free Si remained in synthesis process or created during their sintering can negatively influence their application. Therefore, evaluation of free Si in these materials is vital in order to judge the suitability of these materials for specific application. In this article free Si was measured by quantitative X-ray diffractometry and wet chemical method. The error results were calculated and analysed in terms of reproducibility and precision. Although XRD was able to detect the free Si in small amounts of 0,1 mass-%, but the gas volumetry was found to be more practical and versatile for industrial application. The detection limit and precision was also comparable to XRD.

Original languageEnglish (US)
PagesE44-E52
Volume93
No10
Specialist publicationCFI Ceramic Forum International
StatePublished - Oct 2016
Externally publishedYes

Keywords

  • Free Si
  • Reaction bonded silicon nitride (RBSN)
  • Silicon nitride bonded silicon carbide (SNBSC)
  • Volumetry X-ray diffractometry

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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