An improved nonlinear current model for GaN HEMT high power amplifier with large gate periphery

Research output: Contribution to journalArticle

Abstract

According to the characteristics of high power GaN amplifier, the common current-voltage (I-V) temperature dependence model established by Angelov is improved in this research. Besides embodying the surface temperature distribution, the most important improvement is that it can describe the current decreasing trend under high bias voltage due to trapping related dispersion and self-heating effect. The practical application shows that the prediction accuracy of the large signal equivalent circuit model is improved obviously after introducing the proposed I-V model.

Original languageEnglish (US)
Pages (from-to)284-293
Number of pages10
JournalJournal of Electromagnetic Waves and Applications
Volume26
Issue number2-3
DOIs
StatePublished - Aug 10 2012

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy(all)

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