An improved model for boron diffusion and activation in silicon

Charlotte T.M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

Technologies such as solid-phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing strategies depends on mathematical models that incorporate accurate defect physics. The present work describes a model that includes a newly discovered representation of defect annihilation at surfaces and of near-surface band bending, together with an improved representation of interstitial clustering. Key parameters are determined by maximum likelihood (ML) estimation and maximum a posteriori (MAP) estimation. The model yields a substantially improved ability to model the behavior of implanted boron over a wide range of annealing conditions.

Original languageEnglish (US)
Pages (from-to)515-521
Number of pages7
JournalAIChE Journal
Volume56
Issue number2
DOIs
StatePublished - Feb 1 2010

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Keywords

  • Annealing
  • Diffusion
  • Interfaces
  • Semiconductor defects
  • Silicon

ASJC Scopus subject areas

  • Biotechnology
  • Environmental Engineering
  • Chemical Engineering(all)

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