Abstract
An improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFET's are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated.
Original language | English (US) |
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Pages (from-to) | 26-28 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 13 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering