An Improved Energy Transport Model Including Nonparabolicity and Non-Maxwellian Distribution Effects

Datong Chen, Edwin C. Kan, Umberto Ravaioli, Chi Wang Shu, Robert W. Dutton

Research output: Contribution to journalArticlepeer-review

Abstract

An improved energy transport model for device simulation is derived from the zeroth and second moments of the Boltzmann transport equation (BTE) and from the presumed functional form of the even part of the carrier distribution in momentum space. Energy-band nonparabolicity and non-Maxwellian distribution effects are included to first order. The model is amenable to an efficient self-consistent discretization taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFET's are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamic (HD) simulations of ballistic diodes, are virtually eliminated.

Original languageEnglish (US)
Pages (from-to)26-28
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number1
DOIs
StatePublished - Jan 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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