Abstract
A microwave technique was used to determine the electron drift velocity in an ion-implanted GaAs MESFET with a 0.5 x 100-µm gate. The characteristics of the velocity versus drain-to-source voltage for a GaAs MESFET exhibit a peak velocity of 4.0, 3.3, and 2.2 x 107 cm/s at 100%, 65%, and 31% of Idss, respectively. This work presents the first experimental result of electron drift velocity at various gate biases and provides verification for velocity overshoot in ion-implanted GaAs MESFET’s.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 40-41 |
| Number of pages | 2 |
| Journal | IEEE Electron Device Letters |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering