An Experimental Determination of Electron Drift Velocity in 0.5-µm Gate-Length Ion-Implanted GaAs MESFET’s

Milton Feng, C. L. Lau, V. Eu

Research output: Contribution to journalArticlepeer-review

Abstract

A microwave technique was used to determine the electron drift velocity in an ion-implanted GaAs MESFET with a 0.5 x 100-µm gate. The characteristics of the velocity versus drain-to-source voltage for a GaAs MESFET exhibit a peak velocity of 4.0, 3.3, and 2.2 x 107 cm/s at 100%, 65%, and 31% of Idss, respectively. This work presents the first experimental result of electron drift velocity at various gate biases and provides verification for velocity overshoot in ion-implanted GaAs MESFET’s.

Original languageEnglish (US)
Pages (from-to)40-41
Number of pages2
JournalIEEE Electron Device Letters
Volume12
Issue number2
DOIs
StatePublished - Feb 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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