Abstract
An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).
Original language | English (US) |
---|---|
Article number | RMO1B-4 |
Pages (from-to) | 43-46 |
Number of pages | 4 |
Journal | Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium |
State | Published - 2005 |
Event | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States Duration: Jun 12 2005 → Jun 14 2005 |
Keywords
- CMOS
- Dual band
- ESD
- LNA
- Linearity
ASJC Scopus subject areas
- General Engineering