An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).
|Original language||English (US)|
|Number of pages||4|
|Journal||Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium|
|State||Published - 2005|
- Dual band
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