An ESD-protected, 2.45/5.25-GHz Dual-Band CMOS LNA with series LC loads and a 0.5-V supply

Sami Hyvonen, Karan Bhatia, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).

Original languageEnglish (US)
Article numberRMO1B-4
Pages (from-to)43-46
Number of pages4
JournalDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
StatePublished - 2005

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Electric potential
Resonators

Keywords

  • CMOS
  • Dual band
  • ESD
  • Linearity
  • LNA

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "An ESD-protected, 2.45/5.25-GHz Dual-Band CMOS LNA with series LC loads and a 0.5-V supply",
abstract = "An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).",
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T1 - An ESD-protected, 2.45/5.25-GHz Dual-Band CMOS LNA with series LC loads and a 0.5-V supply

AU - Hyvonen, Sami

AU - Bhatia, Karan

AU - Rosenbaum, Elyse

PY - 2005

Y1 - 2005

N2 - An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).

AB - An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).

KW - CMOS

KW - Dual band

KW - ESD

KW - Linearity

KW - LNA

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