An epitaxial Si/SiO2 superlattice barrier

R. Tsu, A. Filios, C. Lofgren, D. Cahill, J. Vannostrand, C. G. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

An epitaxial strain layer Si/SiO2 superlattice barrier (SLSB) for silicon formed by monolayers of adsorbed oxygen, sandwiched between adjacent thin silicon layers deposited with molecular beam, showed good epitaxy with an effective barrier height of 1.7 eV. Such a barrier should be important for future quantum devices in silicon, as well as new applications in conventional MOS technology.

Original languageEnglish (US)
Pages (from-to)221-223
Number of pages3
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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