An epitaxial strain layer Si/SiO2 superlattice barrier (SLSB) for silicon formed by monolayers of adsorbed oxygen, sandwiched between adjacent thin silicon layers deposited with molecular beam, showed good epitaxy with an effective barrier height of 1.7 eV. Such a barrier should be important for future quantum devices in silicon, as well as new applications in conventional MOS technology.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry