An approach to quantum correction in Monte Carlo device simulation

B. Winstead, H. Tsuchiya, U. Ravaioli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A particle-based approach coupled with quantum potential corrections is very attractive for practical simulation of nanoscale semiconductor devices. We present here a quantum correction approach derived from a simplification of the Wigner function transport equation, which is applied to Monte Carlo particle simulation of semiconductor devices. The quantum potential is obtained from a first order truncation of the expansion form of the Wigner equation, resembling the semi-classical Boltzmann transport equation with additional terms for the driving forces, appearing as differentials of the quantum potential correction. We present here several recent applications, that illustrate the capabilities and the limitations of quantum corrected Monte Carlo simulation. The method is applied to 1-D MOS capacitor structures and results are compared with the solution of a coupled Schrödinger/Poisson solver. Tunneling through single barriers in III-V compound structures is also analyzed.

Original languageEnglish (US)
Title of host publication2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
EditorsM. Laudon, B. Romanowicz
Pages566-569
Number of pages4
StatePublished - Dec 1 2001
Event2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 - Hilton Head Island, SC, United States
Duration: Mar 19 2001Mar 21 2001

Publication series

Name2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Other

Other2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
CountryUnited States
CityHilton Head Island, SC
Period3/19/013/21/01

Keywords

  • Monte Carlo device simulation
  • Quantum correction
  • Tunneling
  • Wigner function

ASJC Scopus subject areas

  • Engineering(all)

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