An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement

Furkan Karakaya; Anuj Maheshwari; Arijit Banerjee; John S. Donnal

doi:10.1109/TPEL.2023.3282585

An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement

Furkan Karakaya, Anuj Maheshwari, Arijit Banerjee, John S. Donnal

Research output: Contribution to journal › Article › peer-review

Abstract

While silicon carbide power mosfets have significantly superior figures-of-merit in comparison to conventional silicon devices, they have seen relatively limited adoption in high-power applications due to intrinsic reliability concerns. One of the most consistent precursors of early device failure is increased on-state resistance (R_ds-on). This article presents the design of a nonintrusive health monitoring circuit (HMC) that can be embedded within the power converter to measure this resistance during operation. The HMC does not require load current information or any interaction with the gate driver. It is experimentally validated for a range of voltage and current levels including continuous operation in a buck converter and provides estimates of R_ds-on within pm5% of the true value for all cases.

Original language	English (US)
Pages (from-to)	11463-11473
Number of pages	11
Journal	IEEE Transactions on Power Electronics
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/TPEL.2023.3282585
State	Published - Sep 1 2023
Externally published	Yes

Keywords

Health monitoring
junction temperature
mosfets
on-state resistance
reliability
silicon carbide (SiC)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/TPEL.2023.3282585

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title = "An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement",

abstract = "While silicon carbide power mosfets have significantly superior figures-of-merit in comparison to conventional silicon devices, they have seen relatively limited adoption in high-power applications due to intrinsic reliability concerns. One of the most consistent precursors of early device failure is increased on-state resistance (R_ds-on). This article presents the design of a nonintrusive health monitoring circuit (HMC) that can be embedded within the power converter to measure this resistance during operation. The HMC does not require load current information or any interaction with the gate driver. It is experimentally validated for a range of voltage and current levels including continuous operation in a buck converter and provides estimates of R_ds-on within pm5% of the true value for all cases.",

keywords = "Health monitoring, junction temperature, mosfets, on-state resistance, reliability, silicon carbide (SiC)",

author = "Furkan Karakaya and Anuj Maheshwari and Arijit Banerjee and Donnal, {John S.}",

note = "Funding Information: This work was supported by the Office of Naval Research MVDC Risk Reduction program under Grants N000142112277, N0001418WX01706, and N000141812889. Publisher Copyright: {\textcopyright} 1986-2012 IEEE.",

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doi = "10.1109/TPEL.2023.3282585",

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AU - Karakaya, Furkan

AU - Maheshwari, Anuj

AU - Banerjee, Arijit

AU - Donnal, John S.

N1 - Funding Information: This work was supported by the Office of Naval Research MVDC Risk Reduction program under Grants N000142112277, N0001418WX01706, and N000141812889. Publisher Copyright: © 1986-2012 IEEE.

PY - 2023/9/1

Y1 - 2023/9/1

N2 - While silicon carbide power mosfets have significantly superior figures-of-merit in comparison to conventional silicon devices, they have seen relatively limited adoption in high-power applications due to intrinsic reliability concerns. One of the most consistent precursors of early device failure is increased on-state resistance (R_ds-on). This article presents the design of a nonintrusive health monitoring circuit (HMC) that can be embedded within the power converter to measure this resistance during operation. The HMC does not require load current information or any interaction with the gate driver. It is experimentally validated for a range of voltage and current levels including continuous operation in a buck converter and provides estimates of R_ds-on within pm5% of the true value for all cases.

AB - While silicon carbide power mosfets have significantly superior figures-of-merit in comparison to conventional silicon devices, they have seen relatively limited adoption in high-power applications due to intrinsic reliability concerns. One of the most consistent precursors of early device failure is increased on-state resistance (R_ds-on). This article presents the design of a nonintrusive health monitoring circuit (HMC) that can be embedded within the power converter to measure this resistance during operation. The HMC does not require load current information or any interaction with the gate driver. It is experimentally validated for a range of voltage and current levels including continuous operation in a buck converter and provides estimates of R_ds-on within pm5% of the true value for all cases.

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KW - reliability

KW - silicon carbide (SiC)

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An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement

Abstract

Keywords

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