An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

Kangguo Cheng; Joseph W. Lyding

doi:10.1109/LED.2003.817377

An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

Research output: Contribution to journal › Article › peer-review

Abstract

Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.

Original language	English (US)
Pages (from-to)	655-657
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	10
DOIs	https://doi.org/10.1109/LED.2003.817377
State	Published - Oct 2003

Keywords

Deuterium passivation
Hot-carrier reliability
Interface traps
Lifetime
MOS transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.817377

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title = "An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps",

abstract = "Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.",

keywords = "Deuterium passivation, Hot-carrier reliability, Interface traps, Lifetime, MOS transistors",

author = "Kangguo Cheng and Lyding, {Joseph W.}",

note = "Funding Information: Manuscript received May 12, 2003; revised June 23, 2003. This work was supported in part by the Office of Naval Research under Grant N00014-00-1-0234, and by the Beckman Institute for Advanced Science under Grant N00014-98-1-0604. The review of this letter was arranged by Editor S. Chung.",

year = "2003",

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AU - Cheng, Kangguo

AU - Lyding, Joseph W.

N1 - Funding Information: Manuscript received May 12, 2003; revised June 23, 2003. This work was supported in part by the Office of Naval Research under Grant N00014-00-1-0234, and by the Beckman Institute for Advanced Science under Grant N00014-98-1-0604. The review of this letter was arranged by Editor S. Chung.

PY - 2003/10

Y1 - 2003/10

N2 - Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.

AB - Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.

KW - Deuterium passivation

KW - Hot-carrier reliability

KW - Interface traps

KW - Lifetime

KW - MOS transistors

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An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

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Keywords

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