An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

Kangguo Cheng, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.

Original languageEnglish (US)
Pages (from-to)655-657
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number10
DOIs
StatePublished - Oct 1 2003

Fingerprint

Hot carriers
Deuterium
MOSFET devices
Passivation
Analytical models
Carrier lifetime
Isotopes
Hydrogen
Degradation

Keywords

  • Deuterium passivation
  • Hot-carrier reliability
  • Interface traps
  • Lifetime
  • MOS transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps. / Cheng, Kangguo; Lyding, Joseph W.

In: IEEE Electron Device Letters, Vol. 24, No. 10, 01.10.2003, p. 655-657.

Research output: Contribution to journalArticle

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