Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.
- Deuterium passivation
- Hot-carrier reliability
- Interface traps
- MOS transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering