Abstract
Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of the metal materials. These resistances, especially the gate resistance, impose more and more significant RC delay to CMOS circuits and become significant concerns in sub-22-nm CMOS. In order to optimize the metal-gate materials and structures for low resistance, accurate metal resistance model is needed. In this letter, we propose an analytical metal resistance model applicable for metal wires and films even with sub-MFP sizes. Our model includes scattering effects from surfaces, interfaces, and grain boundaries, and has been successfully verified on W metal gates with the feature sizes ranging from 20 to 70 nm.
| Original language | English (US) |
|---|---|
| Article number | 7045484 |
| Pages (from-to) | 384-386 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 36 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2015 |
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Keywords
- CMOS
- analytical model
- gate resistance
- metal gate
- metal resistance
- scattering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS. / Miao, Xin; Bao, Ruqiang; Kwon, Unoh; Wong, Keith; Rausch, Werner; Weng, Weihao; Wachnik, Richard; Grunow, Stephan; Narayanan, Vijay; Li, Xiuling; Krishnan, Siddarth.
In: IEEE Electron Device Letters, Vol. 36, No. 4, 7045484, 01.04.2015, p. 384-386.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS
AU - Miao, Xin
AU - Bao, Ruqiang
AU - Kwon, Unoh
AU - Wong, Keith
AU - Rausch, Werner
AU - Weng, Weihao
AU - Wachnik, Richard
AU - Grunow, Stephan
AU - Narayanan, Vijay
AU - Li, Xiuling
AU - Krishnan, Siddarth
PY - 2015/4/1
Y1 - 2015/4/1
N2 - Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of the metal materials. These resistances, especially the gate resistance, impose more and more significant RC delay to CMOS circuits and become significant concerns in sub-22-nm CMOS. In order to optimize the metal-gate materials and structures for low resistance, accurate metal resistance model is needed. In this letter, we propose an analytical metal resistance model applicable for metal wires and films even with sub-MFP sizes. Our model includes scattering effects from surfaces, interfaces, and grain boundaries, and has been successfully verified on W metal gates with the feature sizes ranging from 20 to 70 nm.
AB - Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of the metal materials. These resistances, especially the gate resistance, impose more and more significant RC delay to CMOS circuits and become significant concerns in sub-22-nm CMOS. In order to optimize the metal-gate materials and structures for low resistance, accurate metal resistance model is needed. In this letter, we propose an analytical metal resistance model applicable for metal wires and films even with sub-MFP sizes. Our model includes scattering effects from surfaces, interfaces, and grain boundaries, and has been successfully verified on W metal gates with the feature sizes ranging from 20 to 70 nm.
KW - CMOS
KW - analytical model
KW - gate resistance
KW - metal gate
KW - metal resistance
KW - scattering
UR - http://www.scopus.com/inward/record.url?scp=84961336483&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961336483&partnerID=8YFLogxK
U2 - 10.1109/LED.2015.2404805
DO - 10.1109/LED.2015.2404805
M3 - Article
AN - SCOPUS:84961336483
VL - 36
SP - 384
EP - 386
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 7045484
ER -