An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS

Xin Miao, Ruqiang Bao, Unoh Kwon, Keith Wong, Werner Rausch, Weihao Weng, Richard Wachnik, Stephan Grunow, Vijay Narayanan, Xiuling Li, Siddarth Krishnan

Research output: Contribution to journalArticle

Abstract

Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of the metal materials. These resistances, especially the gate resistance, impose more and more significant RC delay to CMOS circuits and become significant concerns in sub-22-nm CMOS. In order to optimize the metal-gate materials and structures for low resistance, accurate metal resistance model is needed. In this letter, we propose an analytical metal resistance model applicable for metal wires and films even with sub-MFP sizes. Our model includes scattering effects from surfaces, interfaces, and grain boundaries, and has been successfully verified on W metal gates with the feature sizes ranging from 20 to 70 nm.

Original languageEnglish (US)
Article number7045484
Pages (from-to)384-386
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number4
DOIs
StatePublished - Apr 1 2015

Keywords

  • CMOS
  • analytical model
  • gate resistance
  • metal gate
  • metal resistance
  • scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Miao, X., Bao, R., Kwon, U., Wong, K., Rausch, W., Weng, W., Wachnik, R., Grunow, S., Narayanan, V., Li, X., & Krishnan, S. (2015). An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS. IEEE Electron Device Letters, 36(4), 384-386. [7045484]. https://doi.org/10.1109/LED.2015.2404805