An analysis of bipolar breakdown and its application to the design of ESD protection circuits

S. Joshi, R. Ida, P. Givelin, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Analytical expressions for the breakdown voltage of an NPN with a resistively grounded base, both with and without the Zener diode trigger which is used in a common ESD protection circuit, are presented for the first time. The results are used to explain anomalous behavior in the I-V curve of the protection circuit, and to achieve a more efficient ESD protection circuit design.

Original languageEnglish (US)
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages240-245
Number of pages6
ISBN (Electronic)0780365879
DOIs
StatePublished - 2001
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: Apr 30 2001May 3 2001

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period4/30/015/3/01

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Keywords

  • Application software
  • BiCMOS integrated circuits
  • Breakdown voltage
  • Circuit synthesis
  • Diodes
  • Electric breakdown
  • Electrostatic discharge
  • Protection
  • Resistors
  • Space charge

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Joshi, S., Ida, R., Givelin, P., & Rosenbaum, E. (2001). An analysis of bipolar breakdown and its application to the design of ESD protection circuits. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 240-245). [922908] (Annual Proceedings - Reliability Physics (Symposium)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922908