An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

We deposited hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C. We characterize the structural properties of the a-Si:H channel and a- SiN_x : H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using conductivity, capacitance-voltage, and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm²/V s, a I_on/I_off ratio of 5 × 10⁵, a subthreshold slope of 0.8 V/decade, and a threshold voltage of 3 V.