An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

C. S. McCormick, C. E. Weber, J. R. Abelson, S. M. Gates

Research output: Contribution to journalArticlepeer-review

Abstract

We deposited hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C. We characterize the structural properties of the a-Si:H channel and a- SiNx : H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using conductivity, capacitance-voltage, and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V s, a Ion/Ioff ratio of 5 × 105, a subthreshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

Original languageEnglish (US)
Pages (from-to)226-227
Number of pages2
JournalApplied Physics Letters
Volume70
Issue number2
DOIs
StatePublished - Jan 13 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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