An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

Karl Hess, Jinju Lee, Zhi Chen, Joseph W Lyding, Young Kwang Kim, Bong Seok Kim, Yong Hee Lee, Young Wug Kim, Kwang Pyuk Suh

Research output: Contribution to journalArticle

Abstract

The giant deuterium isotope effect found previously for NMOS hot electron degradation is applied to study defect generation at the Si-SiO2 interface. The data suggest that interface defects related to hydrogen depassivation may be generated directly by channel hot electrons bombarding the interface without the necessity of injection into the oxide. This is in contrast to the standard teaching that energetic holes, created by impact ionization, and injected into the oxide are the main cause for hydrogen-related defect generation at the Si-SiO2 interfaces.

Original languageEnglish (US)
Pages (from-to)1914-1916
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume46
Issue number9
DOIs
StatePublished - Dec 1 1999

Keywords

  • CMOS
  • Deuterium
  • Hot-carrier
  • Relizbility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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