TY - GEN
T1 - An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications
AU - Bhatia, Karan
AU - Hyvonen, Sami
AU - Rosenbaum, Elyse
PY - 2006
Y1 - 2006
N2 - A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (3-4dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.
AB - A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (3-4dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.
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U2 - 10.1109/CICC.2006.320955
DO - 10.1109/CICC.2006.320955
M3 - Conference contribution
AN - SCOPUS:39049108700
SN - 1424400767
SN - 9781424400768
T3 - Proceedings of the Custom Integrated Circuits Conference
SP - 385
EP - 388
BT - Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, CICC 2006
T2 - IEEE 2006 Custom Integrated Circuits Conference, CICC 2006
Y2 - 10 September 2006 through 13 September 2006
ER -