An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications

Karan Bhatia, Sami Hyvonen, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (3-4dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2006 Custom Integrated Circuits Conference, CICC 2006
Pages385-388
Number of pages4
DOIs
StatePublished - Dec 1 2006
EventIEEE 2006 Custom Integrated Circuits Conference, CICC 2006 - San Jose, CA, United States
Duration: Sep 10 2006Sep 13 2006

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

OtherIEEE 2006 Custom Integrated Circuits Conference, CICC 2006
Country/TerritoryUnited States
CitySan Jose, CA
Period9/10/069/13/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications'. Together they form a unique fingerprint.

Cite this