Amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

C. S. McCormick, C. E. Weber, J. R. Abelson

Research output: Contribution to journalConference articlepeer-review


We deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5×105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

Original languageEnglish (US)
Pages (from-to)53-57
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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