Amorphous silicon buriEDchannel thin-film transistors

Cory Weber, John R. Abelson

Research output: Contribution to journalArticlepeer-review


We demonstrate a buriEDchannel thin-film field effect transistor (TFT) based on deposited silicon nitride and hydrogenated amorphous silicon with the conducting channel recessed approximately 50 A from the interface. We fabricate transistors and capacitors by dc reactive magnetron sputtering of a silicon target in a plasma of (Ar + H2 + N2) or (Ar + Hz) for the nitride and silicon layers, respectively. To create a step in the conduction band, and thus a buriEDchannel, we vary the hydrogen partial pressure which varies the hydrogen content and the bandgap of amorphous silicon. Capacitance-voltage and current-voltage measurements on these devices present strong evidence for the existence of the buriEDchannel. We achieve a record field effect mobility in saturation of 1.68 cm2/V-s with amorphous silicon deposited at 230 °C, and an acceptable mobility of 0.44 cm2/V-s with amorphous silicon deposited at 125 °C.

Original languageEnglish (US)
Pages (from-to)447-452
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - 1998
Externally publishedYes


  • Amorphous semiconductor materials/devices
  • Buried channel
  • Flat panel display
  • Mis devices
  • Silicon materials/devices
  • Sputtering
  • Thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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