Abstract
We demonstrate a buriEDchannel thin-film field effect transistor (TFT) based on deposited silicon nitride and hydrogenated amorphous silicon with the conducting channel recessed approximately 50 A from the interface. We fabricate transistors and capacitors by dc reactive magnetron sputtering of a silicon target in a plasma of (Ar + H2 + N2) or (Ar + Hz) for the nitride and silicon layers, respectively. To create a step in the conduction band, and thus a buriEDchannel, we vary the hydrogen partial pressure which varies the hydrogen content and the bandgap of amorphous silicon. Capacitance-voltage and current-voltage measurements on these devices present strong evidence for the existence of the buriEDchannel. We achieve a record field effect mobility in saturation of 1.68 cm2/V-s with amorphous silicon deposited at 230 °C, and an acceptable mobility of 0.44 cm2/V-s with amorphous silicon deposited at 125 °C.
Original language | English (US) |
---|---|
Pages (from-to) | 447-452 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 45 |
Issue number | 2 |
DOIs | |
State | Published - 1998 |
Externally published | Yes |
Keywords
- Amorphous semiconductor materials/devices
- Buried channel
- Flat panel display
- Mis devices
- Silicon materials/devices
- Sputtering
- Thin-film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering