Amorphous Silicon Alloys on C-Si: Influence of Substrate Cleaning and Ion Bombardment on Film Adhesion and Microstructure

S. Y. Yang, John R Abelson

Research output: Contribution to journalArticle

Abstract

Substrate cleaning and ion bombardment play important roles in the adhesion, morphology, and structure of hydrogenated amorphous silicon and silicon-carbon alloys grown on c-Si by dc reactive magnetron sputtering. Scanning electron microscopy is used to study the surface morphology and fracture cross section of films. The hydrogen bonding and microstructure are studied by infrared absorption, thermal evolution of hydrogen. The best adhesion is obtained by (i) cleaning the substrate with a combination of cycles of ultraviolet/ozone oxidation and HF etching and by (ii) reducing plasma ion bombardment through electrically floating the c-Si substrate. The reduced ion bombardment has a significant influence on the hydrogen bonding configurations and hydrogen evolution process.

Original languageEnglish (US)
Pages (from-to)1327-1331
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number4
DOIs
StatePublished - Jul 1993

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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