Ambipolar doping in SnO

J. B. Varley, A. Schleife, A. Janotti, C. G. Van De Walle

Research output: Contribution to journalArticlepeer-review


SnO is a promising oxide semiconductor that can be doped both p- and n-type, but the doping mechanisms remain poorly understood. Using hybrid functionals, we find that native defects cannot account for the unintentional p-type conductivity. Sn vacancies are shallow acceptors, but they have high formation energies and are unlikely to form. Unintentional impurities offer a more likely explanation for p-type doping; hydrogen is a likely candidate, and we find that it forms shallow-acceptor complexes with Sn vacancies. We also demonstrate that the ambipolar behavior of SnO can be attributed to the high position of the valence-band on an absolute energy scale.

Original languageEnglish (US)
Article number082118
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 19 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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