Aluminum thin film growth by the thermal decomposition of triethylamine alane

Lawrence H. Dubois; Bernard R. Zegarski; Mihal E. Gross; Ralph G. Nuzzo

doi:10.1016/0039-6028(91)90172-O

Aluminum thin film growth by the thermal decomposition of triethylamine alane

Lawrence H. Dubois, Bernard R. Zegarski, Mihal E. Gross, Ralph G. Nuzzo

Research output: Contribution to journal › Article › peer-review

Abstract

Triethylamine alane (TEAA) decomposes on an Al(111) single crystal surface at temperatures above ∼310 K to yield pure aluminum thin films, liberating hydrogen and triethylamine into the gas phase. Aluminum deposition is epitaxial and clean (no carbon or nitrogen containing species are observed by Auger electron spectroscopy). The film growth rate is limited by the rate of the recombinative desorption of hydrogen from the surface. These results are compared to similar data from experiments on the surface-mediated thermal decomposition of trimethylamine alane.

Original language	English (US)
Pages (from-to)	89-95
Number of pages	7
Journal	Surface Science
Volume	244
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(91)90172-O
State	Published - Mar 1 1991
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(91)90172-O

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AU - Dubois, Lawrence H.

AU - Zegarski, Bernard R.

AU - Gross, Mihal E.

AU - Nuzzo, Ralph G.

PY - 1991/3/1

Y1 - 1991/3/1

N2 - Triethylamine alane (TEAA) decomposes on an Al(111) single crystal surface at temperatures above ∼310 K to yield pure aluminum thin films, liberating hydrogen and triethylamine into the gas phase. Aluminum deposition is epitaxial and clean (no carbon or nitrogen containing species are observed by Auger electron spectroscopy). The film growth rate is limited by the rate of the recombinative desorption of hydrogen from the surface. These results are compared to similar data from experiments on the surface-mediated thermal decomposition of trimethylamine alane.

AB - Triethylamine alane (TEAA) decomposes on an Al(111) single crystal surface at temperatures above ∼310 K to yield pure aluminum thin films, liberating hydrogen and triethylamine into the gas phase. Aluminum deposition is epitaxial and clean (no carbon or nitrogen containing species are observed by Auger electron spectroscopy). The film growth rate is limited by the rate of the recombinative desorption of hydrogen from the surface. These results are compared to similar data from experiments on the surface-mediated thermal decomposition of trimethylamine alane.

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Aluminum thin film growth by the thermal decomposition of triethylamine alane

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