Aluminum Nitride Lamb Wave Delay Lines with Sub-6 dB Insertion Loss

Ruochen Lu, Steffen Link, Shibin Zhang, Michael Breen, Songbin Gong

Research output: Contribution to journalArticle

Abstract

We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.

Original languageEnglish (US)
Article number8736501
Pages (from-to)569-571
Number of pages3
JournalJournal of Microelectromechanical Systems
Volume28
Issue number4
DOIs
StatePublished - Aug 2019

Keywords

  • CMOS-MEMS integration
  • Microelectromechanical systems
  • acoustic delay lines
  • aluminum nitride
  • lamb modes
  • piezoelectric transducers

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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