TY - JOUR
T1 - Aluminum Nitride Lamb Wave Delay Lines with Sub-6 dB Insertion Loss
AU - Lu, Ruochen
AU - Link, Steffen
AU - Zhang, Shibin
AU - Breen, Michael
AU - Gong, Songbin
N1 - Manuscript received April 25, 2019; revised May 20, 2019; accepted May 22, 2019. Date of publication June 13, 2019; date of current version July 31, 2019. This work was supported by the Defense Advanced Research Projects Agency-Microsystems Technology Office under the Near Zero Power RF and Sensor Operations program. Subject Editor R. T. Howe. (Corresponding author: Ruochen Lu.) The authors are with the Department of Electrical and Computing Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: [email protected]).
PY - 2019/8
Y1 - 2019/8
N2 - We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.
AB - We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.
KW - CMOS-MEMS integration
KW - Microelectromechanical systems
KW - acoustic delay lines
KW - aluminum nitride
KW - lamb modes
KW - piezoelectric transducers
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U2 - 10.1109/JMEMS.2019.2919031
DO - 10.1109/JMEMS.2019.2919031
M3 - Article
AN - SCOPUS:85070331160
SN - 1057-7157
VL - 28
SP - 569
EP - 571
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 4
M1 - 8736501
ER -