Aluminum Nitride Lamb Wave Delay Lines with Sub-6 dB Insertion Loss

Ruochen Lu; Steffen Link; Shibin Zhang; Michael Breen; Songbin Gong

doi:10.1109/JMEMS.2019.2919031

Aluminum Nitride Lamb Wave Delay Lines with Sub-6 dB Insertion Loss

Ruochen Lu, Steffen Link, Shibin Zhang, Michael Breen, Songbin Gong

Research output: Contribution to journal › Article › peer-review

Abstract

We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.

Original language	English (US)
Article number	8736501
Pages (from-to)	569-571
Number of pages	3
Journal	Journal of Microelectromechanical Systems
Volume	28
Issue number	4
DOIs	https://doi.org/10.1109/JMEMS.2019.2919031
State	Published - Aug 2019

Keywords

CMOS-MEMS integration
Microelectromechanical systems
acoustic delay lines
aluminum nitride
lamb modes
piezoelectric transducers

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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10.1109/JMEMS.2019.2919031

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Cite this

@article{798bf1d4a88041a090c491fac3c0d32d,

title = "Aluminum Nitride Lamb Wave Delay Lines with Sub-6 dB Insertion Loss",

abstract = "We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.",

keywords = "CMOS-MEMS integration, Microelectromechanical systems, acoustic delay lines, aluminum nitride, lamb modes, piezoelectric transducers",

author = "Ruochen Lu and Steffen Link and Shibin Zhang and Michael Breen and Songbin Gong",

note = "Funding Information: Manuscript received April 25, 2019; revised May 20, 2019; accepted May 22, 2019. Date of publication June 13, 2019; date of current version July 31, 2019. This work was supported by the Defense Advanced Research Projects Agency-Microsystems Technology Office under the Near Zero Power RF and Sensor Operations program. Subject Editor R. T. Howe. (Corresponding author: Ruochen Lu.) The authors are with the Department of Electrical and Computing Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: rlu10@illinois.edu).",

year = "2019",

month = aug,

doi = "10.1109/JMEMS.2019.2919031",

language = "English (US)",

volume = "28",

pages = "569--571",

journal = "Journal of Microelectromechanical Systems",

issn = "1057-7157",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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AU - Lu, Ruochen

AU - Link, Steffen

AU - Zhang, Shibin

AU - Breen, Michael

AU - Gong, Songbin

N1 - Funding Information: Manuscript received April 25, 2019; revised May 20, 2019; accepted May 22, 2019. Date of publication June 13, 2019; date of current version July 31, 2019. This work was supported by the Defense Advanced Research Projects Agency-Microsystems Technology Office under the Near Zero Power RF and Sensor Operations program. Subject Editor R. T. Howe. (Corresponding author: Ruochen Lu.) The authors are with the Department of Electrical and Computing Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: rlu10@illinois.edu).

PY - 2019/8

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N2 - We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.

AB - We present a group of low-loss Lamb mode acoustic delay lines in an aluminum nitride (AlN) thin film. The low-loss acoustic delay lines are enabled by the thickness-field-excited single-phase unidirectional transducers. The fabricated miniature acoustic delay lines show a fractional bandwidth of 4.5%, a minimum insertion loss of 5.9 dB, outperforming the previously reported aluminum nitride delay platforms. The demonstrated delay ranges from 105 ns to 165 ns with center frequencies from 175 MHz to 255 MHz. The design approach and the significantly lower insertion loss described herein are expected to open new horizons for hybridized signal processing based on AlN and CMOS.

KW - CMOS-MEMS integration

KW - Microelectromechanical systems

KW - acoustic delay lines

KW - aluminum nitride

KW - lamb modes

KW - piezoelectric transducers

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