Abstract
An alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The time-dependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and the experimental data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.
Original language | English (US) |
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Pages (from-to) | 313-317 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 513 |
DOIs | |
State | Published - 1998 |
Event | Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 17 1998 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering