Alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface

Zhi Chen, Jinju Lee, Joseph W Lyding

Research output: Contribution to journalConference article

Abstract

An alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The time-dependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and the experimental data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.

Original languageEnglish (US)
Pages (from-to)313-317
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume513
StatePublished - Jan 1 1998
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

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Hot carriers
degradation
Degradation
traps
approximation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface. / Chen, Zhi; Lee, Jinju; Lyding, Joseph W.

In: Materials Research Society Symposium - Proceedings, Vol. 513, 01.01.1998, p. 313-317.

Research output: Contribution to journalConference article

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