AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

C. Bayram, Z. Vashaei, M. Razeghi

Research output: Contribution to journalArticle

Abstract

AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/ cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.

Original languageEnglish (US)
Article number042103
JournalApplied Physics Letters
Volume96
Issue number4
DOIs
StatePublished - Feb 8 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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