All-semiconductor plasmonic perfect absorber

S. Law, C. Roberts, T. Kilpatrick, L. Yu, T. Ribaudo, E. A. Shaner, V. Podolskiy, Daniel M Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.

Original languageEnglish (US)
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
StatePublished - Jan 1 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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