All-semiconductor plasmonic perfect absorber

S. Law; C. Roberts; T. Kilpatrick; L. Yu; T. Ribaudo; E. A. Shaner; V. Podolskiy; D. Wasserman

All-semiconductor plasmonic perfect absorber

S. Law, C. Roberts, T. Kilpatrick, L. Yu, T. Ribaudo, E. A. Shaner, V. Podolskiy, D. Wasserman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2013
Pages	CM2F.6
State	Published - 2013
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States Duration: Jun 9 2013 → Jun 14 2013

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2013

Other

Other	CLEO: Science and Innovations, CLEO_SI 2013
Country/Territory	United States
City	San Jose, CA
Period	6/9/13 → 6/14/13

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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@inproceedings{f7fa2d3ec81e4ad78e280db22bb91025,

title = "All-semiconductor plasmonic perfect absorber",

abstract = "We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.",

author = "S. Law and C. Roberts and T. Kilpatrick and L. Yu and T. Ribaudo and Shaner, {E. A.} and V. Podolskiy and D. Wasserman",

year = "2013",

language = "English (US)",

isbn = "9781557529725",

series = "CLEO: Science and Innovations, CLEO_SI 2013",

pages = "CM2F.6",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO_SI 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - All-semiconductor plasmonic perfect absorber

AU - Law, S.

AU - Roberts, C.

AU - Kilpatrick, T.

AU - Yu, L.

AU - Ribaudo, T.

AU - Shaner, E. A.

AU - Podolskiy, V.

AU - Wasserman, D.

PY - 2013

Y1 - 2013

N2 - We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.

AB - We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.

UR - http://www.scopus.com/inward/record.url?scp=84887459172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887459172&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887459172

SN - 9781557529725

T3 - CLEO: Science and Innovations, CLEO_SI 2013

SP - CM2F.6

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

All-semiconductor plasmonic perfect absorber

Abstract

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ASJC Scopus subject areas

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