AlGaN/InGaN HEMTs for RF current collapse suppression

W. Lanford, V. Kumar, R. Schwindt, A. Kuliev, I. Adesida, A. M. Dabiran, A. M. Wowchak, P. P. Chow, J. W. Lee

Research output: Contribution to journalArticle

Abstract

A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

Original languageEnglish (US)
Pages (from-to)771-772
Number of pages2
JournalElectronics Letters
Volume40
Issue number12
DOIs
StatePublished - Jun 10 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Lanford, W., Kumar, V., Schwindt, R., Kuliev, A., Adesida, I., Dabiran, A. M., Wowchak, A. M., Chow, P. P., & Lee, J. W. (2004). AlGaN/InGaN HEMTs for RF current collapse suppression. Electronics Letters, 40(12), 771-772. https://doi.org/10.1049/el:20040398