AlGaN/GaN MOSHEMT with high-quality gate-SiO ₂ achieved by room-temperature radio frequency magnetron sputtering

Keyphrases

• Silica 100%
• Room Temperature 100%
• Radio Frequency Magnetron Sputtering 100%
• AlGaN-GaN 100%
• MOS-HEMT 100%
• Quality Gates 100%
• Order of Magnitude 33%
• High Electron Mobility Transistor 33%
• SiO2 Film 33%
• Surface Damage 33%
• 2-dimensional Electron Gas (2DEG) 33%
• Oxygen Vacancy 33%
• Breakdown Voltage 33%
• Gate Leakage Current 33%
• GaN-based 33%
• Dielectric Deposition 33%
• Electron Mobility 33%
• Deposition Methods 33%
• Electron Concentration 33%
• Post-annealing 33%
• Breakdown Field 33%
• Gate Insulator 33%
• Sputtering Gas 33%
• Thermal Energy Demand 33%
• Saturation Drain Current 33%

Engineering

• Room Temperature 100%
• Radio Frequency 100%
• Magnetron 100%
• Metal Oxide Semiconductor 100%
• Induced Surface 33%
• Dielectrics 33%
• Current Drain 33%
• Breakdown Voltage 33%
• Breakdown Field 33%
• Electron Concentration 33%
• Oxygen Vacancy 33%
• Energy Requirement 33%
• Thermal Energy 33%

Material Science

• Transistor 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Magnetron Sputtering 100%
• Electron Mobility 100%
• Film 33%
• Surface Damage 33%
• Oxygen Vacancy 33%
• Dielectric Material 33%