TY - GEN
T1 - AlGaN/GaN HFETs for low noise applications
AU - Adesida, I.
AU - Lu, W.
AU - Kumar, V.
N1 - Publisher Copyright:
© 2001 IEEE.
PY - 2001
Y1 - 2001
N2 - GaN and related materials have recently attracted significant interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor, is more mature, the AlGaInN material system offers numerous advantages. These include wider bandgaps, excellent transport properties, and the availability of bandgap engineering. All these advantages have led to rapid progress in the realization of various GaN-based electronic devices, especially the AlGaN/GaN heterojunction field effect transistor (HFET). This paper presents recent progress in the development of fabrication processes and device performance of AlGaN/GaN HFETs at the University of Illinois. A unity current gain cut-off frequency (fT) of over 100 GHz and a maximum oscillation frequency (fmax) of 155 GHz were demonstrated for AlGaN/GaN HFETs with a gate length of 0.12 μm on SiC substrates grown by MOCVD. These devices exhibited excellent microwave noise performance with a minimum noise figure (NFmin) of 0.53 dB and an associated gain (Ga) of 12.1 dB at 8 GHz achieved. Results of devices on sapphire substrates are also presented.
AB - GaN and related materials have recently attracted significant interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor, is more mature, the AlGaInN material system offers numerous advantages. These include wider bandgaps, excellent transport properties, and the availability of bandgap engineering. All these advantages have led to rapid progress in the realization of various GaN-based electronic devices, especially the AlGaN/GaN heterojunction field effect transistor (HFET). This paper presents recent progress in the development of fabrication processes and device performance of AlGaN/GaN HFETs at the University of Illinois. A unity current gain cut-off frequency (fT) of over 100 GHz and a maximum oscillation frequency (fmax) of 155 GHz were demonstrated for AlGaN/GaN HFETs with a gate length of 0.12 μm on SiC substrates grown by MOCVD. These devices exhibited excellent microwave noise performance with a minimum noise figure (NFmin) of 0.53 dB and an associated gain (Ga) of 12.1 dB at 8 GHz achieved. Results of devices on sapphire substrates are also presented.
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U2 - 10.1109/ICSICT.2001.982106
DO - 10.1109/ICSICT.2001.982106
M3 - Conference contribution
AN - SCOPUS:84964434440
T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
SP - 1163
EP - 1168
BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
A2 - Iwai, Hiroshi
A2 - Qu, Xin-Ping
A2 - Li, Bing-Zong
A2 - Ru, Guo-Ping
A2 - Yu, Paul
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Y2 - 22 October 2001 through 25 October 2001
ER -