AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

B. S. Shelton, J. J. Huang, D. J.H. Lambert, T. G. Zhu, M. M. Wong, C. J. Eiting, H. K. Kwon, M. Feng, R. D. Dupuis

Research output: Contribution to journalArticlepeer-review

Abstract

Heterojunction bipolar transistors based on aluminum gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterized. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n+-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al0.1G0.9N emitter with n+-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature.

Original languageEnglish (US)
Pages (from-to)80-81
Number of pages2
JournalElectronics Letters
Volume36
Issue number1
DOIs
StatePublished - Jan 6 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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