Heterojunction bipolar transistors based on aluminum gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterized. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n+-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al0.1G0.9N emitter with n+-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jan 6 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering