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AlGaN/GaN HEMTs on SiC with over 100 GHz f
T
and low microwave noise
Wu Lu
, Jinwei Yang
, M. Asif Khan
, Ilesanmi Adesida
Office of the Provost and Executive Vice Chancellor
Research output
:
Contribution to journal
›
Article
›
peer-review
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Dive into the research topics of 'AlGaN/GaN HEMTs on SiC with over 100 GHz f
T
and low microwave noise'. Together they form a unique fingerprint.
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Keyphrases
AlGaN-GaN
100%
GaN HEMT
100%
Drain Bias
100%
Microwave Noise
100%
Drain Current
75%
NFmin
75%
Gate Length
50%
Noise Performance
50%
High Performance
25%
Bias Current
25%
Current Gain Cutoff Frequency
25%
Gate Bias
25%
Extrinsic Transconductance
25%
Threshold Voltage
25%
Current Drive
25%
SiC Substrate
25%
Fmax
25%
Maximum Oscillation Frequency
25%
Driving Capability
25%
Associated Gain
25%
Current Sweep
25%
GaN FET
25%
Peak Gain
25%
Minimum Noise Figure
25%
Engineering
Drain Bias
100%
Current Drain
75%
Gate Length
50%
Noise Performance
50%
Field Effect Transistor
25%
Current Gain
25%
Cutoff Frequency
25%
Gate Bias
25%
Current Drive
25%
Noise Figure
25%
Earth and Planetary Sciences
High Electron Mobility Transistors
100%
Threshold Voltage
33%
Transconductance
33%
Agricultural and Biological Sciences
Gates
100%