AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review


AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured on these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs.

Original languageEnglish (US)
Pages (from-to)455-457
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 2002
Externally publishedYes


  • GaN
  • High electron mobility transistors (HEMTs)
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'AlGaN/GaN HEMTs on SiC with fT of over 120 GHz'. Together they form a unique fingerprint.

Cite this