Abstract
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.
Original language | English (US) |
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DOIs | |
State | Published - Jan 1 2002 |
Event | 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Netherlands Duration: Apr 17 2002 → Apr 19 2002 |
Other
Other | 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 |
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Country | Netherlands |
City | Oranjestad, Aruba |
Period | 4/17/02 → 4/19/02 |
ASJC Scopus subject areas
- Hardware and Architecture
- Control and Systems Engineering