The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Jul 3 1997|
- Field effect transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering