AlGaN-GaN heterostructure FETs with offset gate design

R. Gaska; Q. Chen; J. Yang; M. Asif Khan; M. S. Shur; A. Ping; I. Adesida

doi:10.1049/el:19970818

AlGaN-GaN heterostructure FETs with offset gate design

R. Gaska, Q. Chen, J. Yang, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

Original language	English (US)
Pages (from-to)	1255-1257
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	14
DOIs	https://doi.org/10.1049/el:19970818
State	Published - Jul 3 1997
Externally published	Yes

Keywords

Field effect transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19970818

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abstract = "The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.",

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AU - Gaska, R.

AU - Chen, Q.

AU - Yang, J.

AU - Asif Khan, M.

AU - Shur, M. S.

AU - Ping, A.

AU - Adesida, I.

PY - 1997/7/3

Y1 - 1997/7/3

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AB - The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

KW - Field effect transistors

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ER -

AlGaN-GaN heterostructure FETs with offset gate design

Abstract

Keywords

ASJC Scopus subject areas

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