AlGaN-GaN heterostructure FETs with offset gate design

R. Gaska, Q. Chen, J. Yang, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida

Research output: Contribution to journalArticlepeer-review


The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

Original languageEnglish (US)
Pages (from-to)1255-1257
Number of pages3
JournalElectronics Letters
Issue number14
StatePublished - Jul 3 1997


  • Field effect transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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