@inproceedings{53559fbfe40149058f6b5b24f28131ec,
title = "AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy",
abstract = "A systematic study on the effect of molecular beam epitaxy (MBE) growth parameters on lattice-matched AlGalnP solar cells on GaAs is presented. MBE has been used to grow the highest efficiency, lattice-matched triple-junction (3J) solar cells to date, and expanding the range of available bandgap energies for the top cell will be an important step towards future 5-6J devices. In this work, we describe ∼2.0 eV AlGaInP cells with internal quantum efficiency values of ∼80% and bandgap-voltage offset values of ∼600 mV. While these values significantly exceed prior reports of MBE-grown AlGaInP, more work is needed to match the performance of AlGaInP cells grown by organometallic vapor phase epitaxy.",
keywords = "AlGaInP, Molecular beam epitaxy, Multi-junction",
author = "Joseph Faucher and Yukun Sun and Daehwan Jung and Diego Martin and Taizo Masuda and Lee, {Minjoo Larry}",
note = "Funding Information: The authors acknowledge funding from the ARPA-E FOCUS program under award: DE-AR0000508. T.M. acknowledges the Toyota Motor Corporation. Shared facilities were supported by the Yale Institute for Nanoscience and Quantum Engineering and National Science Foundation MRSEC DMR 1119826.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366096",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3500--3505",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
address = "United States",
}