AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy

Joseph Faucher, Yukun Sun, Daehwan Jung, Diego Martin, Taizo Masuda, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A systematic study on the effect of molecular beam epitaxy (MBE) growth parameters on lattice-matched AlGalnP solar cells on GaAs is presented. MBE has been used to grow the highest efficiency, lattice-matched triple-junction (3J) solar cells to date, and expanding the range of available bandgap energies for the top cell will be an important step towards future 5-6J devices. In this work, we describe ∼2.0 eV AlGaInP cells with internal quantum efficiency values of ∼80% and bandgap-voltage offset values of ∼600 mV. While these values significantly exceed prior reports of MBE-grown AlGaInP, more work is needed to match the performance of AlGaInP cells grown by organometallic vapor phase epitaxy.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-5
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - Jan 1 2017
Externally publishedYes
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • AlGaInP
  • Molecular beam epitaxy
  • Multi-junction

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Faucher, J., Sun, Y., Jung, D., Martin, D., Masuda, T., & Lee, M. L. (2017). AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-5). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366096