AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy

Joseph Faucher, Yukun Sun, Daehwan Jung, Diego Martin, Taizo Masuda, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A systematic study on the effect of molecular beam epitaxy (MBE) growth parameters on lattice-matched AlGalnP solar cells on GaAs is presented. MBE has been used to grow the highest efficiency, lattice-matched triple-junction (3J) solar cells to date, and expanding the range of available bandgap energies for the top cell will be an important step towards future 5-6J devices. In this work, we describe ∼2.0 eV AlGaInP cells with internal quantum efficiency values of ∼80% and bandgap-voltage offset values of ∼600 mV. While these values significantly exceed prior reports of MBE-grown AlGaInP, more work is needed to match the performance of AlGaInP cells grown by organometallic vapor phase epitaxy.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-39
Number of pages5
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Externally publishedYes
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • AlGaInP
  • molecular beam epitaxy
  • multi-junction

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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