@inproceedings{f0ac82df23604ba3b7b7a5d8544e7475,
title = "AlGalnP solar cells with high internal quantum efficiency grown by molecular beam epitaxy",
abstract = "A systematic study on the effect of molecular beam epitaxy (MBE) growth parameters on lattice-matched AlGalnP solar cells on GaAs is presented. MBE has been used to grow the highest efficiency, lattice-matched triple-junction (3J) solar cells to date, and expanding the range of available bandgap energies for the top cell will be an important step towards future 5-6J devices. In this work, we describe ∼2.0 eV AlGaInP cells with internal quantum efficiency values of ∼80% and bandgap-voltage offset values of ∼600 mV. While these values significantly exceed prior reports of MBE-grown AlGaInP, more work is needed to match the performance of AlGaInP cells grown by organometallic vapor phase epitaxy.",
keywords = "AlGaInP, molecular beam epitaxy, multi-junction",
author = "Joseph Faucher and Yukun Sun and Daehwan Jung and Diego Martin and Taizo Masuda and Lee, {Minjoo Larry}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749404",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "35--39",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}