AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

Kanglin Xiong, Hongyi Mi, Tzu Hsuan Chang, Dong Liu, Zhenyang Xia, Meng Yin Wu, Xin Yin, Shaoqin Gong, Weidong Zhou, Jae Cheol Shin, Xiuling Li, Michael Arnold, Xudong Wang, Hao Chih Yuan, Zhenqiang Ma

Research output: Contribution to journalArticle

Abstract

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

Original languageEnglish (US)
Pages (from-to)47-55
Number of pages9
JournalEnergy Science and Engineering
Volume6
Issue number1
DOIs
StatePublished - Feb 2018

Keywords

  • Epitaxy
  • heterogeneous
  • solar cell
  • thin films

ASJC Scopus subject areas

  • Safety, Risk, Reliability and Quality
  • Energy(all)

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    Xiong, K., Mi, H., Chang, T. H., Liu, D., Xia, Z., Wu, M. Y., Yin, X., Gong, S., Zhou, W., Shin, J. C., Li, X., Arnold, M., Wang, X., Yuan, H. C., & Ma, Z. (2018). AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding. Energy Science and Engineering, 6(1), 47-55. https://doi.org/10.1002/ese3.182