AlF3 - A new very high resolution electron beam resist

A. Muray, M. Isaacson, I. Adesida

Research output: Contribution to journalArticlepeer-review


Using dose resolved energy loss and energy filtered imaging, the mechanism of a new high resolution resist, AlF3, is examined. It is found that exposure induces mass loss including the displacement of Al ions. From the energy filtered images, it is observed that the Al coats the walls of the exposed area. Further, it is demonstrated that high resolution patterns exposed in AlF3 can be replicated into Si3N4 substrates.

Original languageEnglish (US)
Pages (from-to)589-591
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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