ALD Al₂O₃ passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

Keyphrases

• Aluminum Oxide 100%
• Passivated 100%
• GaN HEMT 100%
• Atomic Layer Deposited 100%
• 6H-SiC 100%
• Fmax 66%
• I-V Characteristics 33%
• Drain Bias 33%
• Power Output 33%
• Maximum Oscillation Frequency 33%
• Al2O3 Layer 33%
• Associated Gain 33%
• Unity Gain Cut-off Frequency 33%
• Pulsed I-V 33%
• Al2O3 Passivation Layer 33%

Engineering

• Atomic Layer 100%
• Current-Voltage Characteristic 33%
• Cutoff Frequency 33%
• Max 33%
• Output Power 33%
• Passivation Layer 33%
• Drain Bias 33%

Earth and Planetary Sciences

• Molecular Beam Epitaxy 100%