ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

D. H. Kim; V. Kumar; G. Chen; A. M. Dabiran; A. M. Wowchak; A. Osinsky; I. Adesida

doi:10.1049/el:20073550

ALD Al₂O₃ passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

D. H. Kim
, V. Kumar
, G. Chen
, A. M. Dabiran
, A. M. Wowchak
, A. Osinsky
, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of atomic-layer-deposited (ALD) Al₂O₃ passivation layer on AlGaN/GaN HEMTs on SiC were studied. Improved pulsed I-V characteristics and a relatively small decrease in the unity gain cutoff frequency (f_T) and the maximum frequency of oscillation (f _max) were observed in the devices passivated using a 45nm-thick ALD Al₂O₃ layer. For 0.12m gatelength devices, f_T (f_max) decreased to 92GHz (115GHz) from 120GHz (140GHz), while for 0.25m devices, f_T (f_max) decreased to 58GHz (120GHz) from 65GHz (137GHz). At a drain bias of 15V, an output power of 3W/mm with an associated gain of 5.0dB and PAE of 33 were obtained for the 0.25m gatelength devices.

Original language	English (US)
Pages (from-to)	127-128
Number of pages	2
Journal	Electronics Letters
Volume	43
Issue number	2
DOIs	https://doi.org/10.1049/el:20073550
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:20073550

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Cite this

@article{5ec346523fc34ee3b973c846ac727658,

title = "ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC",

abstract = "The effects of atomic-layer-deposited (ALD) Al2O3 passivation layer on AlGaN/GaN HEMTs on SiC were studied. Improved pulsed I-V characteristics and a relatively small decrease in the unity gain cutoff frequency (fT) and the maximum frequency of oscillation (f max) were observed in the devices passivated using a 45nm-thick ALD Al2O3 layer. For 0.12m gatelength devices, fT (fmax) decreased to 92GHz (115GHz) from 120GHz (140GHz), while for 0.25m devices, fT (fmax) decreased to 58GHz (120GHz) from 65GHz (137GHz). At a drain bias of 15V, an output power of 3W/mm with an associated gain of 5.0dB and PAE of 33 were obtained for the 0.25m gatelength devices.",

author = "Kim, \{D. H.\} and V. Kumar and G. Chen and Dabiran, \{A. M.\} and Wowchak, \{A. M.\} and A. Osinsky and I. Adesida",

year = "2007",

doi = "10.1049/el:20073550",

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volume = "43",

pages = "127--128",

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TY - JOUR

T1 - ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

AU - Kim, D. H.

AU - Kumar, V.

AU - Chen, G.

AU - Dabiran, A. M.

AU - Wowchak, A. M.

AU - Osinsky, A.

AU - Adesida, I.

PY - 2007

Y1 - 2007

N2 - The effects of atomic-layer-deposited (ALD) Al2O3 passivation layer on AlGaN/GaN HEMTs on SiC were studied. Improved pulsed I-V characteristics and a relatively small decrease in the unity gain cutoff frequency (fT) and the maximum frequency of oscillation (f max) were observed in the devices passivated using a 45nm-thick ALD Al2O3 layer. For 0.12m gatelength devices, fT (fmax) decreased to 92GHz (115GHz) from 120GHz (140GHz), while for 0.25m devices, fT (fmax) decreased to 58GHz (120GHz) from 65GHz (137GHz). At a drain bias of 15V, an output power of 3W/mm with an associated gain of 5.0dB and PAE of 33 were obtained for the 0.25m gatelength devices.

AB - The effects of atomic-layer-deposited (ALD) Al2O3 passivation layer on AlGaN/GaN HEMTs on SiC were studied. Improved pulsed I-V characteristics and a relatively small decrease in the unity gain cutoff frequency (fT) and the maximum frequency of oscillation (f max) were observed in the devices passivated using a 45nm-thick ALD Al2O3 layer. For 0.12m gatelength devices, fT (fmax) decreased to 92GHz (115GHz) from 120GHz (140GHz), while for 0.25m devices, fT (fmax) decreased to 58GHz (120GHz) from 65GHz (137GHz). At a drain bias of 15V, an output power of 3W/mm with an associated gain of 5.0dB and PAE of 33 were obtained for the 0.25m gatelength devices.

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DO - 10.1049/el:20073550

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EP - 128

JO - Electronics Letters

JF - Electronics Letters

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