Al-Ga interdiffusion in heavily carbon-doped AlxGa 1-xAs-GaAs quantum well heterostructures

L. J. Guido, B. T. Cunningham, D. W. Nam, K. C. Hsieh, W. E. Plano, J. S. Major, E. J. Vesely, A. R. Sugg, N. Holonyak, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Impurity-induced layer disordering experiments on AlxGa 1-xAs-GaAs quantum well heterostructures (QWHs) that are doped heavily with carbon are described. The data show that carbon doping retards Al-Ga interdiffusion relative to an undoped crystal, and that interdiffusion in C-doped QWHs is not enhanced by a Ga-rich (versus As-rich) annealing ambient. The data are inconsistent with most Fermi-level-effect models for layer disordering that do not include chemical impurity dependence or sublattice dependence, and that do not consider the possibility of inhibited Al-Ga interdiffusion in extrinsic crystals.

Original languageEnglish (US)
Pages (from-to)2179-2182
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number4
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Guido, L. J., Cunningham, B. T., Nam, D. W., Hsieh, K. C., Plano, W. E., Major, J. S., Vesely, E. J., Sugg, A. R., Holonyak, N., & Stillman, G. E. (1990). Al-Ga interdiffusion in heavily carbon-doped AlxGa 1-xAs-GaAs quantum well heterostructures. Journal of Applied Physics, 67(4), 2179-2182. https://doi.org/10.1063/1.345560