TY - GEN
T1 - Aerosol-assisted chemical vapor deposited thin films for space photovoltaics
AU - Hepp, Aloysius F.
AU - McNatt, Jeremiah S.
AU - Dickman, John E.
AU - Jin, Michael H.C.
AU - Banger, Kulbinder K.
AU - Kelly, Christopher V.
AU - Aquino Gonzalez, Angel R.
AU - Rockett, Angus A.
PY - 2006
Y1 - 2006
N2 - Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395°C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45 eV, 1.43 eV, 1.37 eV, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03%.
AB - Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395°C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45 eV, 1.43 eV, 1.37 eV, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03%.
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U2 - 10.2514/6.2006-4010
DO - 10.2514/6.2006-4010
M3 - Conference contribution
AN - SCOPUS:33751417593
SN - 156347817X
SN - 9781563478178
T3 - Collection of Technical Papers - 4th International Energy Conversion Engineering Conference
SP - 100
EP - 114
BT - Collection of Technical Papers - 4th International Energy Conversion Engineering Conference
PB - American Institute of Aeronautics and Astronautics Inc.
T2 - 4th International Energy Conversion Engineering Conference
Y2 - 26 June 2006 through 29 June 2006
ER -