Aerosol-assisted chemical vapor deposited thin films for space photovoltaics

Aloysius F. Hepp, Jeremiah S. McNatt, John E. Dickman, Michael H.C. Jin, Kulbinder K. Banger, Christopher V. Kelly, Angel R. Aquino Gonzalez, Angus A. Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395°C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45 eV, 1.43 eV, 1.37 eV, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03%.

Original languageEnglish (US)
Title of host publicationCollection of Technical Papers - 4th International Energy Conversion Engineering Conference
PublisherAmerican Institute of Aeronautics and Astronautics Inc.
Pages100-114
Number of pages15
ISBN (Print)156347817X, 9781563478178
DOIs
StatePublished - 2006
Externally publishedYes
Event4th International Energy Conversion Engineering Conference - San Diego, CA, United States
Duration: Jun 26 2006Jun 29 2006

Publication series

NameCollection of Technical Papers - 4th International Energy Conversion Engineering Conference
Volume1

Other

Other4th International Energy Conversion Engineering Conference
Country/TerritoryUnited States
CitySan Diego, CA
Period6/26/066/29/06

ASJC Scopus subject areas

  • Engineering(all)

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