Advancing Lithium Niobate Based Thin Film Devices for 5G Front-Ends

Yansong Yang, Ruochen Lu, Ali Kourani, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A brief review of the motivations and development effort for LN thin film devices is offered before recent advances on LN thin film devices are reported. LN devices for a sub-6 GHz band and X-band have designed and fabricated. As a result of the design and implementation effort, the most advanced LN resonator is reported at 1. 7 GHz with a kt2 of 14%, a high Q of 3112, a FoM of 435, and a spurious-free response, greatly surpassing the state of art at this frequency range. An acoustic prototype filter at 10 GHz is also demonstrated with an insertion loss of 3.8 dB, out of band rejection of 20 dB, and an FBW of 0.8%.

Original languageEnglish (US)
Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages881-884
Number of pages4
ISBN (Electronic)9781728113098
StatePublished - Jun 2019
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: Jun 2 2019Jun 7 2019

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2019-June
ISSN (Print)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period6/2/196/7/19

Keywords

  • 5G
  • acoustic
  • filters
  • lithium niobate
  • resonators

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, Y., Lu, R., Kourani, A., & Gong, S. (2019). Advancing Lithium Niobate Based Thin Film Devices for 5G Front-Ends. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 881-884). [8700993] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc..