Advances in oxide-confined vertical cavity lasers

Kent D. Choquette, R. P. Schneider, K. L. Lear, K. M. Geib, H. Q. Hou, H. C. Chui, M. Hagerott Crawford, W. W. Chow

Research output: Contribution to journalConference articlepeer-review


During the past two years significant performance advances have been achieved in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser. This paper reviews the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.

Original languageEnglish (US)
Pages (from-to)203-204
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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