Abstract
During the past two years significant performance advances have been achieved in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser. This paper reviews the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 203-204 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering