Advances in Gallium nitride-based electronics

I. Adesida, V. Kumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The III-nitrides AlN, GaN, InN and their alloys are a novel family of semiconductor materials for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs) have shown superior power density and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the advances in the GaN HEMT technology.

Original languageEnglish (US)
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages1-6
Number of pages6
DOIs
StatePublished - Dec 1 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, Province of China
Duration: Dec 20 2007Dec 22 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan, Province of China
CityTainan
Period12/20/0712/22/07

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Adesida, I., & Kumar, V. (2007). Advances in Gallium nitride-based electronics. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 1-6). [4450046] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450046