Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation

B. W. Chui; L. Aeschimann; T. Akiyama; U. Staufer; N. F. De Rooij; J. Lee; F. Goericke; W. P. King; P. Vettiger

doi:10.1063/1.2722386

Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation

B. W. Chui, L. Aeschimann, T. Akiyama, U. Staufer, N. F. De Rooij, J. Lee, F. Goericke, W. P. King, P. Vettiger

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Abstract

We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors.

Original language	English (US)
Article number	043706
Journal	Review of Scientific Instruments
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.2722386
State	Published - 2007

ASJC Scopus subject areas

Instrumentation

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10.1063/1.2722386

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@article{b0cb174caeb3419da8e9ce0f04da9556,

title = "Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation",

abstract = "We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors.",

author = "Chui, {B. W.} and L. Aeschimann and T. Akiyama and U. Staufer and {De Rooij}, {N. F.} and J. Lee and F. Goericke and King, {W. P.} and P. Vettiger",

note = "Funding Information: We acknowledge the invaluable assistance of the technical staff of COMLab, the common IMT/CSEM nanofabrication facility at Neuchatel. In addition, discussions and collaboration with the CSEM colleagues of the probe array technology project (PROBART) are highly appreciated. PROBART was partially financed by the TOP Nano 21 program of the Board of the Federal Institute of Technology. We are grateful to T.W. Kenny, H.J. Mamin, and D. Rugar for helpful discussions.",

year = "2007",

doi = "10.1063/1.2722386",

language = "English (US)",

volume = "78",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation

AU - Chui, B. W.

AU - Aeschimann, L.

AU - Akiyama, T.

AU - Staufer, U.

AU - De Rooij, N. F.

AU - Lee, J.

AU - Goericke, F.

AU - King, W. P.

AU - Vettiger, P.

N1 - Funding Information: We acknowledge the invaluable assistance of the technical staff of COMLab, the common IMT/CSEM nanofabrication facility at Neuchatel. In addition, discussions and collaboration with the CSEM colleagues of the probe array technology project (PROBART) are highly appreciated. PROBART was partially financed by the TOP Nano 21 program of the Board of the Federal Institute of Technology. We are grateful to T.W. Kenny, H.J. Mamin, and D. Rugar for helpful discussions.

PY - 2007

Y1 - 2007

N2 - We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors.

AB - We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors.

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DO - 10.1063/1.2722386

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JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 4

M1 - 043706

ER -

Advanced temperature compensation for piezoresistive sensors based on crystallographic orientation

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